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THERMAL CHARACTERISTICS MAXIMUM RATINGS
Maximum Lead Temperature for Soldering Purposes: 1/16 from Case for 10 seconds Thermal Resistance, Junction to Case Operating and Storage Junction Temperature Range Total Power Dissipation @ TC = 25_C Derate above 25_C Emitter Current -- Continuous Base Current -- Continuous Collector Current -- Continuous Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage
(c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data * High Safe Operating Area (100% Tested) -- 200 W @ 40 V 50 W @ 100 V * For Low Distortion Complementary Designs * High DC Current Gain -- hFE = 25 (Min) @ IC = 4 Adc
Complementary Silicon Power Transistors
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
The MJ15001 and MJ15002 are EpiBase power transistors designed for high power audio, disk head positioners and other linear applications.
v
Characteristic
Rating
Symbol
Symbol
TJ, Tstg
VCBO
VCEO
VEBO
RJC
PD
TL
IC
IE
IB
- 65 to + 200
Value
0.875
Max
200 1.14
265
140
140
15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 140 VOLTS 200 WATTS
20
15
5
5
MJ15001 PNP MJ15002
Order this document by MJ15001/D
CASE 1-07 TO-204AA (TO-3)
NPN
Watts W/_C
_C/W
Unit
Unit
Adc
Adc
Adc
Vdc
Vdc
Vdc
_C
_C
1
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MJ15001 MJ15002
(1) Pulse Test: Pulse Width = 300 s, Duty Cycle
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
DYNAMIC CHARACTERISTICS
ON CHARACTERISTICS
SECOND BREAKDOWN
OFF CHARACTERISTICS
Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
Current-Gain -- Bandwidth Product (IC = 0.5 Adc, VCE = 10 Vdc, ftest = 0.5 MHz)
Base-Emitter On Voltage (IC = 4 Adc, VCE = 2 Vdc)
Collector-Emitter Saturation Voltage (IC = 4 Adc, IB = 0.4 Adc)
DC Current Gain (IC = 4 Adc, VCE = 2 Vdc)
Second Breakdown Collector Current with Base Forward Biased (VCE = 40 Vdc, t = 1 s (non-repetitive)) (VCE = 100 Vdc, t = 1 s (non-repetitive))
Emitter Cutoff Current (VEB = 5 Vdc, IC = 0)
Collector Cutoff Current (VCE = 140 Vdc, IB = 0)
Collector Cutoff Current (VCE = 140 Vdc, VBE(off) = 1.5 Vdc) (VCE = 140 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C)
Collector-Emitter Sustaining Voltage (1) (IC, = 200 mAdc, IB = 0)
2
200 0.2 0.3 0.7 0.5 IC, COLLECTOR CURRENT (AMP) 10 7 5 1 3 2 2
Figure 1. Active-Region Safe Operating Area
3
5 7 10 20 30 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
TJ = 200C BONDING WIRE LIMITED THERMAL LIMITATION (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO
TC = 25C
Characteristic
v 2%.
200
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 1 is based on T J (pk) = 200_C; T C is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
Motorola Bipolar Power Transistor Device Data
VCEO(sus) VCE(sat) VBE(on) Symbol ICEO IEBO ICEX Cob hFE IS/b fT Min 140 5 0.5 25 -- -- -- -- -- -- -- 2 1000 Max 150 100 250 100 2 -- -- -- -- 2 1 Adc mAdc Adc Adc MHz Unit Vdc Vdc Adc Vdc -- pF
MJ15001 MJ15002
TYPICAL CHARACTERISTICS
1000 700 500 C, CAPACITANCE (pF) 300 200 100 70 50 30 20 10 1.5 2 MJ15001 (NPN) MJ15002 (PNP) f T, CURRENT-GAIN -- BANDWIDTH PRODUCT (MHz) 10 9 8 7 6 5 4 3 2 1 0 0.1 23 0.2 0.3 0.5 0.7 1 IC, COLLECTOR CURRENT (AMP) 5 7 10 MJ15001 (NPN) TJ = 25C VCE = 10 V ftest = 0.5 MHz MJ15002 (PNP)
Cib Cib
TJ = 25C
Cob
Cob
3
5 20 30 50 7 10 VR, REVERSE VOLTAGE (VOLTS)
70
100 150
Figure 2. Capacitances
Figure 3. Current-Gain -- Bandwidth Product
MJ15001
200 100 hFE , DC CURRENT GAIN 70 50 30 20 10 7 5 3 2 0.2 0.3 TJ = 100C 25C hFE , DC CURRENT GAIN VCE = 2 Vdc 100 70 50 30 20 10 7 5 3 2 0.2 0.3 200 TJ = 100C 25C
MJ15002
VCE = 2 Vdc
0.5 0.7 1 2 3 5 7 IC, COLLECTOR CURRENT (AMP)
10
20
0.5 0.7 1 2 3 57 IC, COLLECTOR CURRENT (AMP)
10
20
Figure 4. DC Current Gain
MJ15001
2.0 2.0
MJ15002
1.6 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS)
1.6
1.2 VBE @ VCE = 2 Vdc 0.8 TJ = 25C 100C VCE(sat) @ IC/IB = 10 0 0.2 0.3 0.5 0.7 1 2 3 TJ = 100C 25C 5 7 10 20
1.2 0.8
VBE @ VCE = 2 Vdc TJ = 25C 100C VCE(sat) @ IC/IB = 10 TJ = 100C 25C 2 3 5 7 10 20
0.4
0.4
0 0.2 0.3
0.5 0.7
1
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 5. "On" Voltages
Motorola Bipolar Power Transistor Device Data
3
MJ15001 MJ15002
PACKAGE DIMENSIONS
A N C -T- E D U V
2 2 PL SEATING PLANE
K
M
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY.
0.13 (0.005) L G
1
TQ
M
Y
M
-Y-
H
B
-Q- 0.13 (0.005)
M
TY
M
DIM A B C D E G H K L N Q U V
INCHES MIN MAX 1.550 REF --- 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --- 0.830 0.151 0.165 1.187 BSC 0.131 0.188
MILLIMETERS MIN MAX 39.37 REF --- 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --- 21.08 3.84 4.19 30.15 BSC 3.33 4.77
STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR
CASE 1-07 TO-204AA (TO-3) ISSUE Z
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
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JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298
4
Motorola Bipolar Power Transistor Device Data
*MJ15001/D*
MJ15001/D

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